MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part & CLAMP DIODE part)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
10
2
7
5
3
2
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
10
1
7 IGBT part: Per unit base = R
th(j–c)
= 0.24°C/W
5 FWDi part: Per unit base = R
th(j–c)
= 0.47°C/W
3 CLAMP Di part: Per unit base = R
th(j–c)
= 0.47°C/W
2
7
5
3
2
7
5
3
2
7
5
3
2
I
rr
t
rr
10
0
3
2
10
1
7
5
3
2
Conditions:
V
CC
= 300V
V
GE
=
±15V
R
G
= 4.2Ω
T
j
= 25°C
2
3
5 7
10
2
2
3
5 7
10
3
10
–1
10
–1
7
5
3
2
7
5
3
2
10
–2
10
–2
Single Pulse
T
C
= 25°C
10
0 1
10
10
–3
10
–5
2 3 5 7
10
–4
2 3 5 7
10
–3
TMIE (s)
10
–3
EMITTER CURRENT I
E
(A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
GATE-EMITTER VOLTAGE V
GE
(V)
18
16
14
12
10
8
6
4
2
0
0
I
C
= 150A
V
CC
= 200V
V
CC
= 300V
200 400 600 800 1000 1200 1400
GATE CHARGE Q
G
(nC)
Mar.2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
