MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
V
RRM
I
F
I
FM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
T
C
= 25°C
Pulse
T
C
= 25°C
Pulse
T
C
= 25°C
Clamp diode part
T
C
= 25°C
Pulse
Conditions
Ratings
600
±20
150
300
150
300
520
600
150
300
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
V
A
A
°C
°C
V
N•m
N•m
g
(Note 2)
(Note 2)
Clamp diode part
Clamp diode part
(Note 2)
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
G
R
th(j-c)
Q
R
th(j-c)
R
R
th(j-c’)
Q
V
FM
t
rr
Q
rr
R
th(j-c)
R
R
th(c-f)
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
*1
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
*1
Contact thermal resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 15mA, V
CE
= 10V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25°C
I
C
= 150A, V
GE
= 15V
T
j
= 125°C
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 150A, V
GE
= 15V
V
CC
= 300V, I
C
= 150A
V
GE1
= V
GE2
= 15V
R
G
= 4.2Ω, Inductive load switching operation
I
E
= 150A
I
E
= 150A, V
GE
= 0V
IGBT part
FWDi part
Tc measured point is just under the chips
I
F
= 150A, Clamp diode part
I
F
= 150A
V
CC
= 300V, V
GE1
= V
GE2
= 15V
R
G
= 4.2Ω, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied
*2
(1/2 module)
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
1.6
1.6
—
—
—
930
—
—
—
—
—
2.8
—
—
—
—
—
—
—
2.8
—
0.07
Max.
1
7
20
2.2
—
41
2.7
1.5
—
120
100
350
250
150
—
2.6
42
0.24
0.47
0.19
*3
2.6
150
—
0.47
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
Ω
°C/W
°C/W
°C/W
V
ns
µC
°C/W
°C/W
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Mar.2002
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
