< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω, R
G(off)
= 3.3Ω
T
j
= 125°C, Inductive load
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω, R
G(off)
= 3.3Ω
T
j
= 150°C, Inductive load
t
d(off)
t
d(off)
Switching Times [µs]
1
t
d(on)
Switching Times [µs]
1
t
d(on)
t
f
t
f
0.1
t
r
0.1
t
r
0.01
100
1000
10000
0.01
100
1000
10000
Collector Current [A]
Collector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω, L
S
= 70nH
T
j
= 125°C, Inductive load
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 1.3Ω, L
S
= 70nH
T
j
= 150°C, Inductive load
10000
10000
Reverse Recovery Current [A]
10
I
rr
1000
10
I
rr
1000
1
t
rr
100
1
t
rr
100
0.1
100
1000
10
10000
0.1
100
1000
10
10000
Emitter Current [A]
Emitter Current [A]
Feb 2013
(HVM-1068)
8
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
Reverse Recovery Time [µs]
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
