< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
r
g
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
T
C
= 25°C, 1/2 module
T
C
= 25°C, 1/2 module
Min
7.0
3.0
1.0
—
600
9.5
15.0
—
—
—
Limits
Typ
—
—
—
0.8
—
—
—
22
0.16
0.28
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
Note1. Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
jopmax
rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWD
i
).
3. Junction temperature (T
j
) should not exceed T
jopmax
rating .
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
Feb 2013
(HVM-1068)
4
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
