< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
V
CC
= 850V, I
C
= 1200A
V
GE
= ±15V, T
j
= 125°C
Inductive load
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1000
V
CC
= 850V, I
C
= 1200A
V
GE
= ±15V, T
j
= 125°C
Inductive load
800
Switching Energies [mJ]
E
on
Switching Energies [mJ]
1500
600
E
off
1000
400
500
E
rec
200
0
0
2
4
6
8
0
0
5
10
15
20
Gate Resistance [Ω]
Gate Resistance [Ω]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
V
CC
= 850V, I
C
= 1200A
V
GE
= ±15V, T
j
= 150°C
Inductive load
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1000
V
CC
= 850V, I
C
= 1200A
V
GE
= ±15V, T
j
= 150°C
Inductive load
800
Switching Energies [mJ]
Switching Energies [mJ]
1500
E
on
E
off
600
1000
400
500
E
rec
200
0
0
2
4
6
8
0
0
5
10
15
20
Gate Resistance [Ω]
Gate Resistance [Ω]
Feb 2013
(HVM-1068)
7
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
