<IGBT Modules>
CM100MXUC-24T/CM100MXUCP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
vj
=25 °C, unless otherwise specified)
BRAKE PART IGBT/DIODE
Symbol
E
on
E
of f
E
rr
r
g
I
RRM
V
F
(Terminal)
Item
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
Reverse current
V
CC
=600 V, V
GE
=±15 V,
Conditions
I
C
=75 A, R
G
=5.6
Ω
I
E
=75 A, R
G
=5.6
Ω
-
V
R
=V
RRM
, G-E short-circuited
I
F
=50 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
Limits
Min.
-
-
-
-
-
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
Typ.
6.1
7.8
3.9
4.0
-
1.75
1.95
2.00
1.65
1.65
1.65
-
5.0
Limits
Min.
-
T
v j
=25 °C
-
-
-
-
T
v j
=150 °C
T
v j
=25 °C
T
v j
=150 °C
Typ.
-
1.35
1.30
1.15
1.10
Limits
Min.
4.85
-7.3
-
-
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Max.
20
1.80
-
1.40
-
Max.
-
-
-
-
1.0
2.40
-
-
2.10
-
-
400
-
Unit
T
v j
=150 °C, Inductive load
mJ
Ω
mA
V
Forward voltage
V
F
(Chip)
I
F
=50 A,
G-E short-circuited,
(Note5)
V
ns
μC
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
V
CC
=600 V, I
F
=50 A, V
GE
=±15 V,
R
G
=15
Ω,
Inductive load
CONVERTER PART DIODE
Symbol
I
RRM
V
F
(Terminal)
Item
Repetitive peak reverse current
V
R
=V
RRM,
T
v j
=150 °C
Conditions
Unit
mA
Forward voltage
V
F
(chip)
I
F
=100 A
V
NTC THERMISTOR PART
Symbol
R
25
ΔR/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
(Note4)
(Note4)
(Note6)
Conditions
Unit
kΩ
%
K
mW
R
100
=493
Ω,
T
C
=100 °C
Approximate by equation
T
C
=25 °C
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
t h(j -c)Q
R
t h(j -c)D
R
t h(j -c)Q
R
t h(j -c)D
R
t h(j -c)D
R
t h(c-s)
Contact thermal resistance
Thermal resistance
Item
Conditions
Junction to case, per Inverter IGBT
Junction to case, per Inverter FWD
Junction to case, Brake IGBT
Junction to case, Brake DIODE
Case to heat sink,
per 1 module,
(Note4)
(Note4)
(Note4)
(Note4, 7)
(Note4)
(Note4)
Limits
Min.
-
-
-
-
-
-
Typ.
-
-
-
-
11.5
3.1
Max.
264
480
339
804
538
-
-
Unit
K/kW
Junction to case, per Converter DIODE
Thermal grease applied
PC-TIM applied
(Note4, 8)
K/kW
Publication Date : June 2018
CMH-11862
6
Ver.1.0
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
