<IGBT Modules>
CM100MXUC-24T/CM100MXUCP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (T
vj
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
Symbol
I
CES
I
GES
V
G E (t h )
V
C E sa t
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=10 mA, V
CE
=10 V
I
C
=100 A, V
GE
=15 V,
Refer to the figure of test circuit
(Note5)
Limits
Min.
-
-
5.4
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
1.75
2.10
2.20
1.55
1.75
1.80
-
-
-
0.75
-
-
-
-
1.80
2.00
2.05
1.55
1.55
1.55
-
10.0
9.2
10.6
5.7
0
Limits
Min.
-
-
5.4
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
T
v j
=25 °C
T
v j
=125 °C
T
v j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
1.75
2.05
2.15
1.60
1.75
1.80
-
-
-
0.57
-
-
-
-
Max.
1.0
0.5
6.6
2.20
-
-
1.85
-
-
18.2
0.5
0.2
-
500
150
500
400
Max.
1.0
0.5
6.6
2.20
-
-
1.80
-
-
24.2
0.7
0.3
-
300
150
500
400
2.35
-
-
2.00
-
-
400
-
-
-
-
-
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
C E sa t
(Chip)
I
C
=100 A,
V
GE
=15 V,
(Note5)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC (Note1)
(Terminal)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=600 V, I
C
=100 A, V
GE
=15 V
V
CC
=600 V, I
C
=100 A, V
GE
=±15 V,
R
G
=3.9
Ω,
Inductive load
I
E
=100 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
V
CE
=10 V, G-E short-circuited
nF
μC
ns
V
Emitter-collector voltage
V
EC (Note1)
(Chip)
I
E
=100 A,
G-E short-circuited,
(Note5)
V
ns
μC
mJ
mJ
Ω
t
rr
Q
rr
E
on
E
of f
E
rr
r
g
(Note1)
(Note1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
V
CC
=600 V, I
E
=100 A, V
GE
=±15 V,
R
G
=3.9
Ω,
Inductive load
V
CC
=600 V, I
C
=I
E
=100 A,
V
GE
=±15 V, R
G
=3.9
Ω,
T
v j
=150 °C,
Inductive load
Per switch
(Note1)
Reverse recovery energy per pulse
Internal gate resistance
BRAKE PART IGBT/DIODE
Symbol
I
CES
I
GES
V
G E (t h )
V
C E sa t
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=7.5 mA, V
CE
=10 V
I
C
=75 A, V
GE
=15 V,
Refer to the figure of test circuit
(Note5)
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
C E sa t
(Chip)
I
C
=75 A,
V
GE
=15 V,
(Note5)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=600 V, I
C
=75 A, V
GE
=15 V
V
CC
=600 V, I
C
=75 A, V
GE
=±15 V,
R
G
=5.6
Ω,
Inductive load
V
CE
=10 V, G-E short-circuited
nF
μC
ns
Publication Date : June 2018
CMH-11862
5
Ver.1.0
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
