<IGBT Modules>
CM100MXUC-24T/CM100MXUCP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
26,27
26,27
26,27
26,27
IF
VGE=15 V
VGE=15 V
VGE=15 V
IC
IC
IC
7
10
13
8,9
11,12
14,15
V
V
V
28,29
24,25
V
8,9
11,12
24,25
14,15
24,25
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
23
21
22
21
20
21
18
21
24,25
Brake DIODE
TrUP
TrVP
TrWP
26,27
26,27
26,27
26,27
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
7
10
11,12
13
14,15
V
V
V
V
8,9
8,9
11,12
24,25
14,15
24,25
28,29
VGE=15 V
VGE=15 V
VGE=15 V
VGE=15 V
IC
IC
IC
IC
22
21
20
21
18
21
23
24,25
24,25
21
TrUN
TrVN
TrWN
Brake IGBT
Gate-emitter GVP-V, GVN-E1,
short-circuited GWP-W, GWN-E1
GB-E1
Gate-emitter GUP-U, GUN-E1,
short-circuited GWP-W, GWN-E1
GB-E1
Gate-emitter GUP-U, GUN-E1,
short-circuited GVP-V, GVN-E1
GB-E1
Gate-emitter GUP-U, GUN-E1,
short-circuited GVP-V, GVN-E1,
GWP-W, GWN-E1
VCEsat /BRAKE DIODE VF characteristics test circuit
30~32
26,27
26,27
26,27
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
IF
IE
IE
IE
7
10
13
8,9
11,12
14,15
V
V
V
1,2
8,9
11,12
24,25
14,15
24,25
V
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
22
20
21
18
21
33~35
24,25
26,27
21
DiUP
DiVP
DiWP
26,27
26,27
30~32
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
7
10
11,12
13
V
V
V
V
8,9
14,15
8,9
11,12
24,25
14,15
24,25
1,2
G-E short-
circuited
G-E short-
circuited
G-E short-
circuited
IE
IE
IE
IF
22
21
20
21
18
21
24,25
33~35
DiUN
DiVN
DiWN
CONVERTER DIODE (ex.phase-R)
Gate-emitter GVP-V, GVN-E1,
short-circuited GWP-W, GWN-E1
GB-E1
Gate-emitter GUP-U, GUN-E1,
short-circuited GWP-W, GWN-E1
GB-E1
Gate-emitter GUP-U, GUN-E1,
short-circuited GVP-V, GVN-E1
GB-E1
VEC / CONVERTER DIODE VF characteristics test circuit
Publication Date : June 2018
CMH-11862
10
Ver.1.0
MITSUBISHI [ Mitsubishi Group ]
