<IGBT Modules>
CM100MXUB-13T/CM100MXUBP-13T
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............…..................…
Collector-emitter voltage V
CES
..................
Maximum junction temperature T
v j m a x
.........
MXUB
●Flat
base type
●Copper
base plate (Nickel-plating)
●RoHS
Directive compliant
●Tin-plating
pin terminals
Collector current I
C
.............…..................…
Collector-emitter voltage V
CES
..................
Maximum junction temperature T
v j m a x
.........
MXUBP
●Flat base type
●Copper
base plate (Nickel-plating)
●RoHS
Directive compliant
●Tin-plating
pressfit terminals
CIB (Converter+Inverter+Chopper Brake)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OPTION (Below options are available.)
●PC-TIM
(Phase Change Thermal Interface Material) pre-apply
INTERNAL CONNECTION
P(28,29)
P1(25,26)
TH1(16)
100
A
650
V
1 7 5
°C
100
A
650
V
1 7 5
°C
●UL
Recognized under UL1557, File No. E323585
Terminal code
1 R
2 R
GuP(7)
GvP(10)
GwP(15)
16 TH1
17 TH2
18 GwN
19 GvN
20 E
21 GuN
22 GB
23 N1
24 N1
25 P1
26 P1
27 B
28 P
29 P
30 N
31 N
NTC
3 S
4 S
5 T
6 T
TH2(17)
7 GuP
8 U
9 U
10 GvP
11 V
12 V
13 W
14 W
15 GwP
R(1,2)
S(3,4)
T(5,6)
GB(22)
B(27)
U(8,9)
V(11,12)
W(13,14)
GuN(21)
GvN(19)
GwN(18)
N(30,31)
N1(23,24)
E(20)
Publication Date : June 2018
CMH-11882
1
Ver.1.0
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
