<IGBT Modules>
CM100MXUB-13T/CM100MXUBP-13T
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
*: U, V, W
v
GE
P1
�½�
�½�
90 %
i
E
-V
GE
G*P
U,V,W
i
E
0V
0
t
Q
r r
=0.5×I
r r
×t
r r
I
E
Load
*
+
V
CC
t
rr
t
�½�
�½�
i
C
90 %
0A
I
rr
+V
GE
0
-V
GE
R
G
v
GE
G*N
E
v
CE
i
C
N1
10%
0A
t
d(on)
t
r
t
d(off)
t
f
t
0.5×I
r r
Switching characteristics test circuit and waveforms
t
r r
, Q
r r
characteristics test waveform
I
CM
v
CE
V
CC
i
C
i
C
V
CC
I
CM
v
CE
0A
i
E
I
EM
v
EC
V
CC
t
0.1×I
CM
0
0.1×V
CC
0.1×V
CC
t
0
0.02×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWD Reverse recovery energy
Switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : June 2018
CMH-11882
9
Ver.1.0
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
