<IGBT Modules>
CM100MXUB-13T1/CM100MXUBP-13T1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T
vj
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWD
Symbol
V
CES
V
GES
I
C
I
CRM
P
t ot
I
E
(Note1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Maximum junction temperature
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Repetitive peak reverse voltage
Forward current
Maximum junction temperature
Item
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
Current square time
Maximum junction temperature
Item
Isolation voltage
Maximum case temperature
Operating junction temperature
Storage temperature
(Note4)
Conditions
G-E short-circuited
C-E short-circuited
DC, T
C
=90°C
T
C
=25 °C
DC
(Note2)
(Note3)
(Note2, 4)
(Note3)
Rating
650
± 20
100
200
325
100
200
175
Rating
650
± 20
75
150
270
650
50
Unit
V
V
A
W
A
°C
Unit
V
V
A
W
V
A
°C
Unit
V
V
A
A
As
°C
Unit
V
°C
°C
2
Pulse, Repetitive
(Note2, 4)
I
ERM (Note1)
T
v jmax
Symbol
V
CES
V
GES
I
C
I
CRM
P
t ot
V
RRM
I
F
I
FRM
T
v jmax
Symbol
V
RRM
E
a
I
o
I
FSM
I t
T
v jmax
2
Pulse, Repetitive
Instantaneous event (overload)
Conditions
G-E short-circuited
C-E short-circuited
DC, T
C
=118 °C
Pulse, Repetitive
T
C
=25 °C
DC
(Note2)
(Note3)
(Note2, 4)
(Note2, 4)
(Note3)
BRAKE PART IGBT/DIODE
G-E short-circuited
Pulse, Repetitive
100
175
Rating
800
220
100
T
v j
= 2 5 °C
T
v j
= 1 5 0 °C
T
v j
= 2 5 °C
T
v j
= 1 5 0 °C
900
720
3375
2160
150
Rating
2500
125
-40 ~ +150
-40 ~ +125
Instantaneous event (overload)
Conditions
-
RMS
3-phase full wave rectifying, Tc=118 °C
(Note4)
The sine half wave 1 cycle peak value,
f=60 Hz, non-repetitive
Value for one cycle of surge current
Instantaneous event (overload)
Conditions
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Continuous operation (under switching)
-
CONVERTER PART DIODE
MODULE
Symbol
V
isol
T
Cmax
T
v jop
T
st g
Publication Date : June 2018
CMH-11887
4
Ver.1.0