MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2000
V
GE
= 20
(V)
T
j
= 25°C
1600
I
C
, (AMPERES)
15
12
2000
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
CE(sat)
, (VOLTS)
5
V
GE
= 15V
4
1600
11
I
C
, (AMPERES)
1200
10
800
1200
3
800
2
400
9
8 7
400
1
T
j
= 25°C
T
j
= 125°C
0
0
2
4
6
8
10
0
0
4
8
12
16
20
V
GE
, (VOLTS)
0
0
400
800
1200
1600
2000
V
CE
, (VOLTS)
I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
4
T
j
= 25°C
T
j
= 25°C
10
3
8
C
ies
, C
oes
, C
res
, (nF)
10
3
6
I
C
= 2000A
I
C
= 1000A
I
E
, (AMPERES)
10
2
C
ies
4
C
oes
10
2
10
1
C
res
2
I
C
= 400A
10
1
1.0
V
GE
= 0V
0
0
4
8
12
16
20
1.5
2.0
2.5
3.0
3.5
10
0
10
-1
10
0
V
CE
, (VOLTS)
10
1
10
2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
V
EC
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, V
GE
(TYPICAL)
10
4
10
3
10
3
20
16
SWITCHING TIME, (ns)
10
3
t
d(off)
V
GE
, (VOLTS)
t
rr
, (ns)
V
CC
= 400V
V
CC
= 600V
t
d(on)
t
f
10
2
I
rr
10
2
I
rr
, (AMPERES)
t
rr
12
8
10
2
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.3
Ω
T
j
= 125°C
di/dt = -2000A/µsec
T
j
= 25°C
4
10
1
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
0
0
2000
4000
Q
G
, (nC)
10
2
10
3
10
4
6000
8000
I
E
, (AMPERES)
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
