MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
U - M4 THD
(2 TYP.)
R
K
P
E
M
G
B
S - M8 THD
(2 TYP.)
A
C
E
C
J
G
Q
T - DIA.
(4 TYP.)
H
L
F
N
E
D
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
one IGBT in a single configuration
with a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-24H is a 1200V
(V
CES
), 1000 Ampere Single IGBT
Module.
Type
CM
Current Rating
Amperes
1000
V
CES
Volts (x 50)
24
E
C
G
E
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
Inches
5.12
4.33±0.01
1.840
Millimeters
130.0
110.0±0.25
46.75
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.79
0.77
0.75
0.61
0.51
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
20.0
19.5
19.0
15.6
13.0
9.0
M8
Dia. 6.5
M4
1.73+0.04/–0.02 44.0+1.0/–0.5
1.46+0.04/–0.02 37.0+1.0/–0.5
1.42
1.25
1.18
1.10
1.08
36.0
31.8
30.0
28.0
27.5
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
