CM1000HA-24H 参数 Datasheet PDF下载

MITSUBISHI IGBT MODULES

CM1000HA-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, T

j

= 25

°

C unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (T

C

= 25°C)

Peak Collector Current (T

j

≤

150°C)

Emitter Current** (T

C

= 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (T

C

= 25°C)

Mounting Torque, M8 Main Terminal

Mounting, Torque M6 Mounting

Mounting, Torque M4 Terminal

Weight

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

*Pulse width and repetition rate should be such that the device junction temperature (T

j

) does not exceed T

j(max)

rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Symbol

T

j

T

stg

V

CES

V

GES

I

C

I

CM

I

E

I

EM

P

c

–

–

–

–

V

iso

CM1000HA-24H

–40 to +150

–40 to +125

1200

±20

1000

2000*

1000

2000*

5800

8.83 ~ 10.8

1.96 ~ 2.94

0.98 ~ 1.47

1600

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

N·m

Grams

Vrma

Static Electrical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Symbol

I

CES

I

GES

V

GE(th)

V

CE(sat)

Q

G

V

EC

Test Conditions

V

CE

= V

CES

, V

GE

= 0V

V

GE

= V

GES

, V

CE

= 0V

I

C

= 100mA, V

CE

= 10V

I

C

= 1000A, V

GE

= 15V

I

C

= 1000A, V

GE

= 15V, T

j

= 150°C

Total Gate Charge

Emitter-Collector Voltage

V

CC

= 600V, I

C

= 1000A, V

GE

= 15V

I

E

= 1000A, V

GE

= 0V

Min.

–

–

4.5

–

–

–

–

Typ.

–

–

6.0

2.7

2.4

5000

–

Max.

6

0.5

7.5

3.6**

–

–

3.5

Units

mA

µA

Volts

Volts

Volts

nC

Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Resistive

Load

Switching

Time

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

ies

C

oes

C

res

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

I

E

= 1000A, di

E

/dt = –2000A/µs

I

E

= 1000A, di

E

/dt = –2000A/µs

V

CC

= 600V, I

C

= 1000A,

V

GE1

= V

GE2

= 15V, R

G

= 3.3Ω

V

GE

= 0V, V

CE

= 10V

Test Conditions

Min.

–

–

–

–

–

–

–

–

–

Typ.

–

–

–

–

–

–

–

–

7.4

Max.

200

70

40

600

1500

1200

350

250

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Thermal and Mechanical Characteristics, T

j

= 25

°

C unless otherwise specified

Characteristics

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Contact Thermal Resistance

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-f)

Test Conditions

Per IGBT

Per FWDi

Per Module, Thermal Grease Applied

Min.

–

–

–

Typ.

–

–

–

Max.

0.022

0.050

0.018

Units

°C/W

°C/W

°C/W

Sep.1998