MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
120
100
80
60
170 170 t2.3
140 140 t2.3
80 80 t2.3
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE ALUMINUM
140
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
NATURAL
40 CONVECTION
RESISTIVE
CURVES APPLY
20 REGARDLESS OF
INDUCTIVE,
CONDUCTION ANGLE LOADS
0
0
8
1
2
3
4
5
6
7
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
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DISTRIBUTION
V
D
= 12V
HOLDING CURRENT (mA)
TYPICAL
EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
+
T
2
, G
+
TYPICAL
�½
–
T
2
, G
–
EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT (mA)
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
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DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
