MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
P
GM
= 3W
P
GM
=
0.3W
I
GM
= 2A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2 V
GM
= 10V
10
3
7
5
4
3
2
TYPICAL EXAMPLE
I
RGT III
I
RGT I
I
FGT I
I
RGT I
I
RGT III
10
2
I
FGT I
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
V
GD
= 0.2V
10
–1
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TRANSIENT THERMAL IMPEDANCE (°C/W)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
TYPICAL EXAMPLE
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
8
6 360°
CONDUCTION
5 RESISTIVE,
INDUCTIVE
4 LOADS
3
2
1
0
0
1
2
3
4
5
6
7
8
CASE TEMPERATURE (°C)
7
140
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
1
2
3
0
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
