MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5AS
OUTLINE DRAWING
Dimensions
in mm
6.5
4
∗
TYPE
NAME
VOLTAGE
CLASS
5.5±0.2
1.5±0.2
5.0±0.2
0.5±0.1
0.9 MAX
1.0
2.3
2.3 MIN
1.0 MAX
10 MAX
0.5±0.2
0.8
case temperature
2.3
2.3
∗
Measurement point of
1
2
3
1
2
33
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
24
• I
T (RMS)
........................................................................ 5A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
1
MP-3
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
