MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
T
j
= 125°C
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
10
2
T
j
= 125°C
7 I
T
= 4A
5
τ
= 500µs
3 V
D
= 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)
C
V
D
CURRENT WAVEFORM
(di/dt)
C
I
T
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
#1
I QUADRANT
#2
III QUADRANT
τ
t
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
10
1
I QUADRANT
7
5
3 MINIMUM
2 CHARAC-
III QUADRANT
10
0
TERISTICS
7 VALUE
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
6V
V
A
R
G
6V
V
A
R
G
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
