MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CS
OUTLINE DRAWING
Dimensions
in mm
4
1.5 MAX
10.5 MAX
4.5
1.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
∗
3.0
–0.5
+0.3
0
–0
+0.3
VOLTAGE
CLASS
1
5
0.8
0.5
1 2 3
24
2.6±0.4
4.5
∗
Measurement
point of case
temperature
• I
T (RMS)
...................................................................... 12A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V5
APPLICATION
Solid state relay, hybrid IC
1
1
2
3 3
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
(1.5)
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
