MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
GATE VOLTAGE (V)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2 V
GM
= 10V
10
1
P
GM
= 5W
P
G(AV)
=
0.5W
V
GT
= 1.5V
I
GM
= 2A
7
5
3
2
I
RGT I,
I
RGT III
I
FGT I
10
0
7
5
3
2
V
GD
= 0.2V
I
RGT I
I
FGT I,
I
RGT III
10
–1
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10
2
2 3 5 7 10
3
2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
32
28
24 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0
2
4
6
8
10
12
14
16
140
120
100
80
60
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
