CDQ0303-QS
Advanced Product Information - May 2005 V1.0
(5 of 18)
Typical Performance
2
2
Associated Gain vs. Frequency and Current Vd=3V
Nfmin vs. Frequency and Current, Vd=3V
25
20
15
10
5
1.65
1.5
10mA
20mA
40mA
60mA
10mA
20mA
40mA
60mA
1.35
1.2
1.05
0.9
0.75
0.6
0.45
0.3
0.15
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
1
1, 2
OIP3 and P1dB vs. Frequency and Temperature, Vds=3V, Ids=20mA
Nfmin and Associated Gain vs. Frequency and Temperature @ Vd=3V,Id=20mA
24
22
20
18
16
14
12
10
8
1.65
30
25
20
15
10
5
1.5
25deg
1.35
1.2
-40deg
OIP3
80deg
NFmin
1.05
0.9
Ga
0.75
0.6
P1dB
25deg
0.45
0.3
-40deg
85deg
6
4
0.15
0
2
0
2
4
6
8
10
12
1
2
3
4
5
6
Frequency (GHz)
Frequency (GHz)
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise as
P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 dBm is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements..
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