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CDQ0303-QS-0000 参数 Datasheet PDF下载

CDQ0303-QS-0000图片预览
型号: CDQ0303-QS-0000
PDF下载: 下载PDF文件 查看货源
内容描述: [Wide Band Low Power Amplifier, 500MHz Min, 6000MHz Max, 4 X 4 MM, ULTRA COMPACT, PLASTIC, QS, QFN-16]
分类和应用: 射频微波
文件页数/大小: 19 页 / 964 K
品牌: MIMIX [ MIMIX BROADBAND ]
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CDQ0303-QS  
Advanced Product Information  
500 MHz to 6000 MHz  
Dual, Ultra Low-Noise,  
High IP3 Amplifier  
May 2005 V1.0  
(1 of 18)  
Features  
Matched Pair of Transistors for Optimum  
Ballanced Amplifier Design  
AlGaAs/InGaAs/AlGaAs pseudomorphic  
High Electron Mobility Transistor (pHEMT)  
High Gain:  
25 dB @ 900 MHz  
21 dB @ 1900 MHz  
Low Noise Figure:  
0.6 dB @ 900 MHz,  
0.7 dB @ 1900 MHz  
17 dBm P1dB at 2 GHz  
33 dBm OIP3 at 2 GHz  
600µm Gate Width: 50Output Impedance  
Excellent Uniformity  
Ultra Compact Surface-Mount QFN Package  
Lead Free Construction  
10 Year MTBF Lifetime  
Excellent Uniformity  
Typical Specifications (50 System)  
Parameter  
900 MHz 1900 MHz 2400 MHz  
Units  
dB  
S21 Gain  
23.5  
-3.0  
-3.5  
31.8  
16.5  
0.55  
50  
20.0  
-4.0  
-4.5  
32.5  
16.0  
0.72  
50  
16.0  
-3.0  
-7.0  
32.7  
16.0  
0.89  
50  
S11 Input Return Loss  
S22 Output Return Loss  
Output IP3  
dB  
Applications  
dB  
Low Noise amplifiers and Oscillators  
Operating over the RF and Microwave  
Frequency Ranges  
dBm  
dBm  
dB  
Output P1 dB  
Noise FIgure  
Cellular/PCS/GSM/W-CDMA  
Mobile Handsets, Base station Receivers and  
Tower-Mount Amplifiers  
Operating Current Range  
Supply Voltage  
mA  
V
3.0  
3.0  
3.0  
WiMAX WLAN, LEO, GEO, WLL/RLL,  
GPS and MMDS Applications  
General Purpose Discrete pHEMT for Other  
Ultra Low-Noise and Medium Power  
Applications  
Note: Typical specifications represents performance for each side of  
the matched pair of transistors in the recommended application circuit  
board (see page 15). It is anticipated that the pair will be used in a bal-  
anced circuit configuration, hence the matches are optimized for best  
noise figure and OIP3 performance.  
frequency range. It can also be used in a dual-band configu-  
ration where a single transistor is used for each band.  
Description  
The CDQ0303-QS is a dual, ultra low-noise amplifi-  
er combining high gain, state-of-the-art noise figure and high  
IP3. Utilizing Celeritek’s distinctive in-house GaAs fabrica-  
tion advantage and matched pair technology, co-located  
matched transistor die are assembled in the 4mm x 4mm  
QFN package. The low-cost, surface-mount, 16 terminal,  
plastic package is also lead-free.  
Celeritek’s high performance packaged pHEMTs are  
ideal for use in all applications where low-noise figure, high  
gain, medium power and good intercept is required. The  
CDQ0303-QS is the perfect solution for the first or second  
stage of a base station LNA due to the excellent combination  
of low-noise figure and linearity. It is also well suited as a  
medium power driver stage in pole-top amplifiers and other  
transmit functions, particularly as the low thermal resistance  
allows extended power dissipation when voltage and current  
are adjusted for increased power and linearity.  
Packaging a matched pair of ultra low-noise devices  
in a single package makes the CDQ0303-QS an ideal product  
for balanced amplifier implementation. It is intended for  
many applications operating in the 900 MHz to 2400 MHz  
3236 Scott Boulevard  
Santa Clara, California 95054  
Phone: (408) 986-5060  
Fax: (408) 986-5095  
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