CDQ0303-QS
Typical Performance
1, 2
OIP3 and P
1dB
vs. Bias at 2GHz
35
OIP3
30
Advanced Product Information - May 2005
V1.0
(4 of 18)
1, 2
OIP3 and P
1dB
vs. I
DSQ
at 1GHz
35
OIP3
30
25
OIP3, P
1dB
(dBm)
OIP3, P
1dB
(dBm)
25
20
20
15
P
1dB
10
4V
3V
15
P
1dB
10
4V
3V
2V
5
5
2V
0
0
10
20
30
I
DSQ
(mA)
40
50
60
0
0
10
20
30
I
DSQ
(mA)
40
50
60
2
1.65
1.5
1.35
1.2
1.05
NFmin(dB)
0.9
3V
0.75
2V
0.6
4V
0.45
0.3
0.15
0
0
10
20
30
IDSQ(mA)
40
50
60
70
9.5
8
6.5
5
0.45
0.3
11
12.5
Ga
NF and Ga vs. Bias at 2GHz
21.5
20
18.5
17
15.5
Ga(dB)
14
NFmin(dB)
1.65
1.5
1.35
Ga
1.2
1.05
0.9
0.75
0.6
NF and Ga vs. Bias at 1GHz
2
23.5
22
20.5
19
17.5
3V
2V
4V
Ga(dB)
16
14.5
13
11.5
10
NFmin
NFmin
0.15
0
0
10
20
30
IDSQ(mA)
40
50
60
70
8.5
7
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise as
P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 dBm is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements..
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