2N2857
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC=1.0
µAdc,
IE=0)
Emitter-Base Breakdown Voltage
(IE = 10
µAdc,
IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc)
15
30
2.5
-
Value
Typ.
-
-
-
-
Max.
-
-
-
.01
Unit
Vdc
Vdc
Vdc
µA
(on)
HFE
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
30
-
150
DYNAMIC
Symbol
f
T
NF
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
Noise Figure (50 Ohms)
(IC = 1.5 mAdc, VCE = 6 Vdc, f = 500 MHz)
Value
Typ.
1.6
5.5
Max.
-
Unit
GHz
dB
MSC1066.PDF 3-10-99
MICROSEMI [ MICROSEMI CORPORATION ]
