2N2857 参数 Datasheet PDF下载

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

2N2857

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

Features

•

•

•

Silicon NPN, To-72 packaged UHF Transistor

1.6 GHz Current-Gain Bandwidth Product @ 5mA IC

2

Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz

1

4

3

1. Emitter

2. Base

3. Collector

4. Case

TO-72

DESCRIPTION:

Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer

applications.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25

°

C)

Symbol

V

CEO

V

CBO

V

EBO

I

C

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Value

15

30

2.5

40

Unit

Vdc

Vdc

Vdc

mA

Thermal Data

P

D

Total Device Dissipation @ T

A

= 25ºC

Derate above 25ºC

200

1.14

mWatts

mW/ ºC

MSC1066.PDF 3-10-99