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HAL855UT-K 参数 Datasheet PDF下载

HAL855UT-K图片预览
型号: HAL855UT-K
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器与任意输出特性 [Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic]
分类和应用: 传感器换能器
文件页数/大小: 42 页 / 2158 K
品牌: MICRONAS [ MICRONAS ]
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HAL855  
DATA SHEET  
3.2. Dimensions of Sensitive Area  
0.25 mm x 0.25 mm  
3.3. Position of Sensitive Areas  
TO92UT-1/-2  
y
1.5 mm nominal  
0.3 mm nominal  
0.3 mm  
A4  
Bd  
3.4. Absolute Maximum Ratings  
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This  
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute  
maximum rating conditions for extended periods will affect device reliability.  
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric  
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-  
lute maximum-rated voltages to this high-impedance circuit.  
All voltages listed are referenced to ground (GND).  
Symbol  
VDD  
Parameter  
Pin No.  
Min.  
14.51)  
Max.  
18  
Unit  
V
Supply Voltage  
1
IDD  
IZ  
Reverse Supply Current  
Current through Protection Device  
Output Voltage  
1
502)  
502)  
mA  
mA  
1 or 3  
3
502)  
VOUT  
0.3  
14  
V
V
>144)  
184)  
IOUT  
TJ  
Continuous Output Current  
Junction Temperature Range  
3
502)  
502)  
mA  
°C  
40  
40  
150  
1703)  
NPROG  
Number of Programming Cycles  
100  
1) t < 1 min.  
2) as long as TJmax is not exceeded  
3) t < 1000h  
4) t < 100h  
20  
Nov. 26, 2008; DSH000149_003EN  
Micronas