HAL810
DATA SHEET
6. Data Sheet History
5. Data Sheet: “HAL810 Programmable Linear Hall-
Effect Sensor”, Feb. 6, 2009, DSH000034_003EN.
Fifth release of the data sheet. Major changes:
1. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, Aug. 16, 2002, 6251-536-1DS. First
release of the data sheet.
– package outline dimension diagram updated.
2. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, Nov. 22, 2002, 6251-536-2DS. Sec-
ond release of the data sheet. Major changes:
– Fig. 2–3: Diagram “Details of EEPROM and Digital
Signal Processing” changed
– Fig. 2–5: Diagram “Example for output characteris-
tics” changed
– DCOQ register programmable from −100% to 100%
in steps of 0.0976%
– Clamping function: minimum duty cycle programma-
ble between 0% and 50% in steps of 0.0488%, max-
imum duty cycle programmable between 0% and
100% in steps of 0.0488%
– Changes in Register Information.
3. Data Sheet: “HAL 810 Programmable Linear Hall
Effect Sensor”, June 24, 2004, 6251-536-3DS. Third
release of the data sheet. Major changes:
– new package diagram for TO92UT-1
– package diagram for TO92UT-2 added
– ammopack diagrams for TO92UT-1/-2 added
– Section 4.2. "Measurement of a PWM Output Sig-
nal" added
4. Data Sheet: “HAL810 Programmable Linear Hall-
Effect Sensor”, Feb. 6, 2009, DSH000034_003EN.
Fourth release of the data sheet. Major changes:
– Section 3.1. "Outline Dimensions" updated
– Section 3.3. "Positions of Sensitive Areas" updated
– Section 3.5. "Recommended Operating Conditions"
updated
– Section 3.6. "Characteristics" updated
– Section 4.1. "Application Circuit" updated
– Section 4.5. "Ambient Temperature" updated
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
30
Feb. 6, 2009; DSH000034_003EN
Micronas
MICRONAS [ MICRONAS ]
