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HAL810 参数 Datasheet PDF下载

HAL810图片预览
型号: HAL810
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器 [Programmable Linear Hall-Effect Sensor]
分类和应用: 传感器
文件页数/大小: 30 页 / 1661 K
品牌: MICRONAS [ MICRONAS ]
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DATA SHEET  
HAL810  
5. Programming of the Sensor  
– Read a register (see Fig. 5–3)  
After evaluating this command, the sensor answers  
with the Acknowledge Bit, 14 Data Bits, and the  
Data Parity Bit on the output.  
5.1. Definition of Programming Pulses  
The sensor is addressed by modulating a serial tele-  
gram on the supply voltage. The sensor answers with  
a serial telegram on the output pin.  
– Programming the EEPROM cells (see Fig. 5–4)  
After evaluating this command, the sensor answers  
with the Acknowledge Bit. After the delay time tw,  
the supply voltage rises up to the programming volt-  
age.  
The bits in the serial telegram have a different bit time  
for the VDD-line and the output. The bit time for the  
VDD-line is defined through the length of the Sync Bit  
at the beginning of each telegram. The bit time for the  
output is defined through the Acknowledge Bit.  
t
t
f
r
V
DDH  
t
t
p0  
p0  
A logical “0” is coded as no voltage change within the  
bit time. A logical “1” is coded as a voltage change  
between 50% and 80% of the bit time. After each bit, a  
voltage change occurs.  
logical 0  
or  
V
V
DDL  
DDH  
t
p1  
5.2. Definition of the Telegram  
t
t
p0  
p0  
logical 1  
or  
Each telegram starts with the Sync Bit (logical 0),  
3 bits for the Command (COM), the Command Parity  
Bit (CP), 4 bits for the Address (ADR), and the  
Address Parity Bit (AP).  
t
V
p1  
DDL  
Fig. 5–1: Definition of logical 0 and 1 bit  
There are different telegram formats:  
– Write a register (see Fig. 5–2)  
After the AP Bit, follow 14 Data Bits (DAT) and the  
Data Parity Bit (DP). If the telegram is valid and the  
command has been processed, the sensor answers  
with an Acknowledge Bit (logical 0) on the output.  
Table 5–1: Telegram parameters  
Symbol  
Parameter  
Pin  
Min.  
Typ.  
Max.  
Unit  
Remarks  
V
Supply Voltage for Low Level  
during Programming  
1
5
5.6  
6
V
DDL  
V
Supply Voltage for High Level  
during Programming  
1
6.8  
8.0  
8.5  
V
DDH  
t
t
t
t
Rise Time  
Fall Time  
1
1
1
3
0.05  
0.05  
1.8  
4
ms  
ms  
ms  
ms  
r
f
Bit Time on V  
1.7  
2
1.75  
3
t
is defined through the Sync Bit  
p0  
p0  
DD  
Bit Time on Output Pin  
t
is defined through the  
pOUT  
pOUT  
Acknowledge Bit  
t
Voltage Change for Logical 1  
1, 3  
1
50  
65  
80  
%
V
% of t or t  
p1  
p0  
pOUT  
V
Supply Voltage for  
12.4  
12.5  
12.6  
DDPROG  
Programming the EEPROM  
t
t
t
t
Programming Time for EEPROM  
Rise Time of Programming Voltage  
Fall Time of Programming Voltage  
1
1
1
1
95  
0.2  
0
100  
0.5  
105  
1
ms  
ms  
ms  
ms  
PROG  
rp  
fp  
w
1
Delay Time of Programming Voltage  
after Acknowledge  
0.5  
0.7  
1
Micronas  
Feb. 6, 2009; DSH000034_003EN  
25