DATA SHEET
HAL810
mA
10
%
120
T = 25 °C
A
1/sensitivity
V
DD
= 5 V
100
80
60
40
20
0
I
8
6
4
2
DD
TC = 16, TCSQ = 8
TC = 0, TCSQ = 12
TC = –20, TCSQ = 12
TC = –31, TCSQ = 0
0
–1.5 –1.0 –0.5 0.0
0.5
1.0
1.5
–50
0
50
100
150
200
°C
mA
I
T
A
OUT
Fig. 3–7: Typical current consumption
Fig. 3–9: Typical 1/sensitivity
versus output current
versus ambient temperature
mT
1.0
%
1.0
TC = 16, TCSQ = 8
0.8
0.8
TC = 0, TCSQ = 12
B
Offset
INL
0.6
0.4
0.2
0.6
0.4
TC = –20, TCSQ = 12
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1
–0.0
–0.2
–0.4
–0.6
–0.8
–1
Range = 30 mT
–50
0
50
100
150
200°C
–40
–20
0
20
B
40 mT
T
A
Fig. 3–8: Typical magnetic offset
Fig. 3–10: Typical nonlinearity
versus ambient temperature
versus magnetic field
Micronas
Feb. 6, 2009; DSH000034_003EN
21