DATA SHEET
HAL55x, HAL56x
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temper-
ature TA).
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
TJ = TA + ΔT
Applications with this arrangement passed the EMC
tests according to the product standard ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Under static conditions and continuous operation, the
following equation applies:
ΔT = IDD × VDD × RTH
R
R
V2
V1
30 Ω
100 Ω
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
1
2
V
DD
V
EMC
4.7 nF
TAmax = TJmax – ΔT
GND
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
DD and Rth, and the max. value for VDD from the appli-
Fig. 5–3: Recommended EMC test circuit
cation.
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from
30 μs to 1 ms, the following equation can be used:
ton
-------------------
ΔT = IDD × VDD × Rth
×
toff + ton
Micronas
Aug. 11, 2009; DSH000026_004EN
25
MICRONAS [ MICRONAS ]
