HAL55x, HAL56x
DATA SHEET
5. Application Notes
5.2. Extended Operating Conditions
5.1. Application Circuit
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Figure 5–1 shows a simple application with a two-wire
sensor. The current consumption can be detected by
measuring the voltage over RL. For correct functioning
Typically, the sensors operate with supply voltages
above 3 V. However, below 4 V, the current consump-
tion and the magnetic characteristics may be outside
the specification.
of the sensor, the voltage between pin 1 and 2 (VDD
)
must be a minimum of 4 V. With the maximum current
consumption of 17 mA, the maximum RL can be calcu-
lated as:
Note: The functionality of the sensor below 4 V is not
tested on a regular base. For special test condi-
tions, please contact Micronas.
VSUPmin – 4V
--------------------------------
=
RLmax
17mA
5.3. Start-up Behavior
V
SUP
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Electrical Characteristics (see
page 14). During the initialization time, the current con-
sumption is not defined and can toggle between low
and high.
V
SIG
R
L
x
2 or GND
Fig. 5–1: Application circuit 1
HAL55x:
After ten(O), the current consumption will be high if the
applied magnetic field B is above BON. The current
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV (ranging
from 10 Ω to 30 Ω) and a capacitor both placed close
to the sensor are recommended (see Fig. 5–2). In this
case, the maximum RL can be calculated as:
consumption will be low if B is below BOFF
.
HAL56x:
In case of sensors with an inverted switching behavior,
the current consumption will be low if B > BOFF and
VSUPmin – 4V
--------------------------------
– RV
RLmax
=
17mA
high if B < BON
.
Note: For magnetic fields between BOFF and BON, the
current consumption of the HAL sensor will be
either low or high after applying VDD. In order to
achieve a defined current consumption, the
1 V
DD
V
SUP
R
V
V
applied magnetic field must be above BON
respectively, below BOFF
,
SIG
.
4.7 nF
R
L
2 or x GND
Fig. 5–2: Application circuit 2
24
Aug. 11, 2009; DSH000026_004EN
Micronas
MICRONAS [ MICRONAS ]
