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PF48F4000P0ZB 参数 Datasheet PDF下载

PF48F4000P0ZB图片预览
型号: PF48F4000P0ZB
PDF下载: 下载PDF文件 查看货源
内容描述: 美光并行NOR闪存的嵌入式存储器( P30-65nm ) [Micron Parallel NOR Flash Embedded Memory (P30-65nm)]
分类和应用: 闪存存储
文件页数/大小: 98 页 / 1366 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb and 512Mb (256Mb/256Mb), P30-65nm  
Read Operations  
Read Operations  
The device supports two read modes: asynchronous page mode and synchronous burst  
mode. Asynchronous page mode is the default read mode after device power-up or a re-  
set. Under asynchronous page mode, the device can also perform single word read. The  
read configuration register must be configured to enable synchronous burst reads of the  
array.  
The device can be in any of four read states: read array, read identifier, read status, or  
read CFI. Upon power-up, or after a reset, the device defaults to read array. To change  
the read state, the appropriate READ command must be written to the device.  
Asynchronous Page Mode Read  
Following a device power-up or reset, asynchronous page mode is the default read  
mode and the device is set to read array. However, to perform array reads after any other  
device operation (WRITE operation), the READ ARRAY command must be issued in or-  
der to read from the array.  
Asynchronous page mode reads can only be performed when read configuration regis-  
ter bit RCR15 is set.  
To perform an asynchronous page-mode read, an address is driven onto the address  
bus, and CE# and ADV# are asserted. WE# and RST# must already have been de-asser-  
ted. WAIT is de-asserted during asynchronous page mode. ADV# can be driven HIGH to  
latch the address, or it must be held LOW throughout the READ cycle. CLK is not used  
for asynchronous page mode reads, and is ignored. If only asynchronous reads are to be  
performed, CLK should be tied to a valid VIH or VSS level, WAIT signal can be floated,  
and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial ac-  
cess time tAVQV delay.  
In asynchronous page mode, 16 data words are “sensed” simultaneously from the array  
and loaded into an internal page buffer. The buffer word corresponding to the initial  
address on the address bus is driven onto DQ[15:0] after the initial access delay. The  
lowest four address bits determine which word of the 16-word page is output from the  
data buffer at any given time.  
Note: Asynchronous page read mode is only supported in main array.  
Asynchronous Single Word Read  
To perform an asynchronous single word read, an address is driven onto the address  
bus, and CE# is asserted. ADV# can either be driven HIGH to latch the address or be  
held LOW throughout the READ cycle. WE# and RST# must already have been de-asser-  
ted. WAIT is set to a de-asserted state during single word mode, as determined by bit 10  
of the read configuration register. CLK is not used for asynchronous single word reads,  
and is ignored. If asynchronous reads are to be performed only, CLK should be tied to a  
valid VIH or VSS level, WAIT can be floated, and ADV# must be tied to ground. After OE#  
is asserted, the data is driven onto DQ[15:0] after an initial access time tAVQV or tGLQV  
delay.  
PDF: 09005aef84566799  
p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2013 Micron Technology, Inc. All rights reserved.  
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