128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
AC Write Specifications
AC Write Specifications
Table 41: AC Write Specifications
Notes 1 and 2 apply to all
Parameter
Symbol
tPHWL
tELWL
Min
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
RST# HIGH recovery to WE# LOW
CE# setup to WE# LOW
150
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
10
4
0
WE# write pulse width LOW
Data setup to WE# HIGH
Address setup to WE# HIGH
CE# hold from WE# HIGH
Data hold from WE# HIGH
Address hold from WE# HIGH
WE# pulse width HIGH
tWLWH
tDVWH
tAVWH
tWHEH
tWHDX
tWHAX
tWHWL
tVPWH
tQVVL
40
40
40
0
0
0
20
5
VPP setup to WE# HIGH
200
3, 7
3, 7
3, 7
3, 7
8
VPP hold from status read
WP# hold from status read
WP# setup to WE# HIGH
WE# HIGH to OE# LOW
0
tQVBL
0
tBHWH
tWHGL
tVLWH
tWHQV
200
0
ADV# LOW to WE# HIGH
WE# HIGH to read valid
55
tAVQV + 30
3, 6, 9
WRITE Operation to Asynchronous Read Transition
WE# HIGH to address valid
tWHAV
Write to Synchronous Read Specification
WE# HIGH to CLK HIGH @ 110 MHz
WE# HIGH to CE# LOW
tWHCH
tWHEL
tWHVL
15
9
–
–
–
ns
ns
ns
3, 6, 11
3, 6, 11
3, 6, 11
WE# HIGH to ADV# LOW
7
Write Specifications with Clock Active
ADV# HIGH to WE# LOW
tVHWL
tCHWL
–
–
27
27
ns
ns
11
11
CLK HIGH to WE# LOW
1. Write timing characteristics during erase suspend are the same as WRITE-only opera-
tions.
Notes:
2. A WRITE operation can be terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width LOW (tWLWH or tELEH) is defined from CE# or WE# LOW (whichever
occurs last) to CE# or WE# HIGH (whichever occurs first). Hence, tWLWH = tELEH = tWLEH
= tELWH.
5. Write pulse width HIGH (tWHWL or tEHEL) is defined from CE# or WE# HIGH (whichever
occurs first) to CE# or WE# LOW (whichever occurs last). Hence, tWHWL = tEHEL = tWHEL
= tEHW.
6. tWHCH must be met when transitioning from a WRITE cycle to a synchronous burst read.
In addition CE# or ADV# must toggle when WE# goes HIGH.
7. VPP and WP# must be at a valid level until erase or program success is determined.
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
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73
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