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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
Program Operations  
Program Operations  
Programming the array changes 1s to 0s. To change 0s to 1s, an ERASE operation must  
be performed. Only one PROGRAM operation can occur at a time. Programming is per-  
mitted during erase suspend.  
Information is programmed into the array by issuing the appropriate command.  
All PROGRAM operations require the addressed block to be unlocked and a valid VPP  
voltage applied throughout the PROGRAM operation. Otherwise, the PROGRAM opera-  
tion will abort, setting the appropriate status register error bit(s).  
If the device is deselected during a PROGRAM or ERASE operation, the device continues  
to consume active power until the PROGRAM or ERASE operation has completed.  
Table 21: PROGRAM Command Bus Cycles  
Setup WRITE Cycle  
Address Bus  
Setup WRITE Cycle Confirm WRITE Cycle Confirm WRITE Cycle  
Command  
Data Bus  
Address Bus  
Data Bus  
SINGLE-WORD  
PROGRAM  
Device address  
0041h  
Device address  
Array data  
BUFFERED PROGRAM  
Device address  
Device address  
00E9h  
0080h  
Device address  
Device address  
00D0h  
00D0h  
BUFFERED ENHANCED  
FACTORY PROGRAM  
Single-Word Programming  
Single-word programming is performed by issuing the SINGLE-WORD PROGRAM com-  
mand. This is followed by writing the desired data at the desired address. The read  
mode of the addressed partition is automatically changed to read status register mode,  
which remains in effect until another READ MODE command is issued.  
Issuing the READ STATUS REGISTER command to another partition switches that par-  
tition’s read mode to read status register mode, thereby allowing programming progress  
to be monitored from that partition’s address.  
Single-Word Programming is supported in control mode only. The array address speci-  
fied must be in the A-half of the programming region.  
During programming, the status register indicates a busy status (SR[7] = 0). Upon com-  
pletion, the status register indicates a ready status (SR[7] = 1). The status register should  
be checked for any errors, then cleared.  
The only valid commands during programming are READ ARRAY, READ ID, READ CFI,  
and PROGRAM SUSPEND. After programming completes, any valid command can be  
issued.  
Issuing the READ ARRAY, READ ID, or READ CFI command to a partition that is actively  
programming causes subsequent reads from that partition to output invalid data. Valid  
data is output only after the PROGRAM operation is complete.  
Standby power levels are not realized until the PROGRAM operation has completed. As-  
serting RST# immediately aborts the PROGRAM operation, and array contents at the  
addressed location are indeterminate. The addressed block should be erased and the  
data reprogrammed.  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.