P30-65nm
Table 37: Burst Read Information (Easy BGA)
Offset(1) Length
P = 10Ah
Description
(Optional flash features and commands)
Hex
Add. Code Value
(P+1D)h
1
Page Mode Read capability
127:
--05 32 byte
bits 0–7 = “n” such that 2n HEX value represents the number of
read-page bytes. See offset 28h for device w ord w idth to
determine page-mode data output w idth. 00h indicates no
read page buffer.
(P+1E)h
(P+1F)h
1
1
Number of synchronous mode read configuration fields that follow . 00h
indicates no burst capability.
128:
129:
--04
--01
4
4
Synchronous mode read capability configuration 1
Bits 3–7 = Reserved
Bits 0–2 “n” such that 2n+1 HEX value represents the maximumnumber of
continuous synchronous reads w hen the device is configured for its maximum
w ord w idth. A value of 07h indicates that the device is capable of continuous
linear bursts that w ill output data until the internal burst counter reaches the end
of the device’s burstable address space. This field’s 3-bit value can be w ritten
directly to the Read Configuration Register bits 0–2 if the device is configured
for its maximumw ord w idth. See offset 28h for w ord w idth to determine the
burst data output w idth.
(P+20)h
(P+21)h
(P+22)h
1
1
1
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
12A:
12B:
12C:
--02
--03
--07
8
16
Cont
Table 38: Partition and Erase Block Region Information
Offset(1)
P = 10Ah
Bottom Top
See table below
Address
Description
(Optional flash features and commands)
Bot
Top
Len
Number of device hardw are-partition regions w ithin the device.
x = 0: a single hardw are partition device (no fields follow ).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.
1
12D:
12D:
(P+23)h (P+23)h
Datasheet
67
Sept 2012
OrderNumber:208042-06
MICRON [ MICRON TECHNOLOGY ]
