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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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N25Q128 - 1.8 V  
Instructions  
Figure 17. Read OTP instruction and data-out sequence  
S
C
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31  
Instruction  
24-bit address  
23 22 21  
3
2
1
0
DQ0  
DQ1  
High Impedance  
S
C
47  
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46  
Dummy cycles  
7
6
5
4
3
2
0
1
DQ0  
DQ1  
DATA OUT n  
DATA OUT 1  
7
6
5
4
3
2
1
0
7
7
6
5
4
3
2
0
1
MSB  
MSB  
MSB  
Read _OTP  
9.1.9  
Write Enable (WREN)  
The Write Enable (WREN) instruction (Figure 8) sets the Write Enable Latch (WEL) bit.  
The Write Enable Latch (WEL) bit must be set prior to every Program, Erase or Write  
instructions:  
Page Program (PP), Dual Input Fast Program (DIFP), Dual Input Extended Fast Program  
(DIEFP), Quad Input Fast Program (QIFP), Quad Input Extended Fast Program (QIEFP),  
Program OTP (POTP), Write to Lock Register (WRLR), Subsector Erase (SSE), Sector  
Erase (SE), Bulk Erase (BE), Write Status Register (WRSR), Write Configuration Register  
(WRCR), Write Enhanced Configuration Register (WRECR) and Write NV Configuration  
Register (WRNVCR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the  
instruction code, and then driving Chip Select (S) High.  
When the Fast POR feature is selected (Non Volatile Configuration Register bit 5) after the  
first Write Enable instruction, the device enters in a latency time (~500 us), necessary to  
internally complete the POR sequence with the modify algorithms. (See Section 11.1: Fast  
POR.) During the POR latency time all the instructions are ignored with the exception of the  
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