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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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N25Q128 - 1.8 V  
Volatile and Non Volatile Registers  
Figure 8.  
Non Volatile and Volatile configuration Register Scheme  
VCR (Volatile Configuration Register)  
and VECR (Volatile Enhanced  
Configuration Register)  
NVCR  
(Non Volatile Configuration Register)  
Register download executed only  
during the power on phase  
Registers download executed after  
a WRVCR or WRVECR  
instructions, it overwrites NVCR  
configurations on iCR  
iCR  
(internal Configuration Register)  
Device behaviour  
A Flag Status Register (FSR), 8 bits, is also available to check the status of the device,  
detecting possible errors or a Program/Erase internal cycle in progress.  
Each register can be read and modified by means of dedicated instructions in all the 3  
protocols (Extended SPI, DIO-SPI, and QIO-SPI).  
Reading time for all registers is comparable; writing time instead is very different: NVCR bits  
are set as Flash Cell memory content requiring a longer time to perform internal writing  
cycles. See Table 33.: AC Characteristics.  
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