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MT48LC4M16A2P-75G 参数 Datasheet PDF下载

MT48LC4M16A2P-75G图片预览
型号: MT48LC4M16A2P-75G
PDF下载: 下载PDF文件 查看货源
内容描述: SDR SDRAM MT48LC16M4A2 â ????梅格4 ×4× 4银行MT48LC8M8A2 â ???? 2梅格×8× 4银行MT48LC4M16A2 â ???? 1梅格×16× 4银行 [SDR SDRAM MT48LC16M4A2 – 4 Meg x 4 x 4 Banks MT48LC8M8A2 – 2 Meg x 8 x 4 Banks MT48LC4M16A2 – 1 Meg x 16 x 4 Banks]
分类和应用: 动态存储器
文件页数/大小: 83 页 / 3595 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb: x4, x8, x16 SDRAM  
AUTO REFRESH Operation  
AUTO REFRESH Operation  
The AUTO REFRESH command is used during normal operation of the device to refresh  
the contents of the array. This command is nonpersistent, so it must be issued each  
time a refresh is required. All active banks must be precharged prior to issuing an AUTO  
REFRESH command. The AUTO REFRESH command should not be issued until the  
minimum tRP is met following the PRECHARGE command. Addressing is generated by  
the internal refresh controller. This makes the address bits “Don’t Care” during an AU-  
TO REFRESH command.  
After the AUTO REFRESH command is initiated, it must not be interrupted by any exe-  
cutable command until tRFC has been met. During tRFC time, COMMAND INHIBIT or  
NOP commands must be issued on each positive edge of the clock. The SDRAM re-  
quires that every row be refreshed each tREF period. Providing a distributed AUTO RE-  
FRESH command—calculated by dividing the refresh period (tREF) by the number of  
rows to be refreshed—meets the timing requirement and ensures that each row is re-  
freshed. Alternatively, to satisfy the refresh requirement a burst refresh can be employed  
after every tREF period by issuing consecutive AUTO REFRESH commands for the num-  
ber of rows to be refreshed at the minimum cycle rate (tRFC).  
PDF: 09005aef80725c0b  
64mb_x4x8x16_sdram.pdf - Rev. U 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 1999 Micron Technology, Inc. All rights reserved.