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MT28F322D18FH-80BET 参数 Datasheet PDF下载

MT28F322D18FH-80BET图片预览
型号: MT28F322D18FH-80BET
PDF下载: 下载PDF文件 查看货源
内容描述: FL灰内存 [FLASH MEMORY]
分类和应用:
文件页数/大小: 44 页 / 519 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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2 MEG x 16  
ASYNC/PAGE/BURST FLASH MEMORY  
GENERAL DESCRIPTION  
The MT28F322D20 and MT28F322D18 are high-  
performance, high-density, nonvolatile Flash memory  
solutions that can significantly improve system perfor-  
mance. This new architecture features a two-memory-  
bank configuration that supports dual-bank operation  
with no latency.  
PleaserefertotheMicronWebsite(www.micron.com/  
flash) for the latest data sheet.  
ARCHITECTURE AND MEMORY  
ORGANIZATION  
The Flash devices contain two separate banks of  
memory (bank a and bank b) for simultaneous READ and  
WRITEoperationsandareavailableinthefollowingbank  
segmentation configuration:  
A high-performance bus interface allows a fast burst  
or page mode data transfer; a conventional asynchro-  
nous bus interface is provided as well.  
The devices allow soft protection for blocks, as read-  
only, by configuring soft protection registers with dedi-  
cated command sequences. For security purposes, two  
64-bit chip protection registers are provided.  
The embedded WORD WRITE and BLOCK ERASE  
functions are fully automated by an on-chip write state  
machine (WSM). Two on-chip status registers, one for  
each of the two memory partitions, can be used to moni-  
tor the WSM status and to determine the progress of the  
program/erase task.  
The erase/program suspend functionality allows  
compatibility with existing EEPROM emulation software  
packages.  
The devices are manufactured using 0.18µm process  
technology.  
• Bank a is one-fourth of the memory containing  
8 x 4K-word parameter blocks, while the remainder  
of bank a is split into 15 x 32K-word blocks.  
• Bank b represents three-fourths of the memory, is  
equallysectored,andcontains48x32K-wordblocks.  
Figures 2 and 3 show the bottom and top memory  
organizations.  
DEVICE MARKING  
Due to the size of the package, Micron’s standard part  
number is not printed on the top of each device. Instead,  
an abbreviated device mark comprised of a five-digit  
alphanumericcodeisused.Theabbreviateddevicemarks  
are cross referenced to the Micron part numbers in  
Table 1.  
Table 1  
Cross Reference for Abbreviated Device Marks  
PRODUCT  
MARKING  
SAMPLE  
MARKING  
MECHANICAL  
SAMPLE MARKING  
PART NUMBER  
MT28F322D20FH-705TET  
MT28F322D20FH-705 BET  
MT28F322D20FH-804TET  
MT28F322D20FH-804 BET  
MT28F322D18FH-705TET  
MT28F322D18FH-705 BET  
MT28F322D18FH-804TET  
MT28F322D18FH-804 BET  
FW546  
FW547  
FW548  
FW549  
FW558  
FW559  
FW543  
FW542  
FX546  
FX547  
FX548  
FX549  
FX558  
FX559  
FX543  
FX542  
FY546  
FY547  
FY548  
FY549  
FY558  
FY559  
FY543  
FY542  
2 Meg x 16 Async/Page/Burst Flash Memory  
MT28F322D20FH_4.p65 – Rev. 4, Pub. 7/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology, Inc.  
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