4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
REVISION HISTORY
Rev. 3, Pub. 12/01 ................................................................................................................................................... 12/01
• Updated input capacitance specification
Rev. 2 ......................................................................................................................................................................................... 3/01
• Changed to 0.18µm process
• 12V VPP no longer supported
• 10V ≤ VHH ≤ 12V
• VOH ≤ VCC - 0.2V
• Typical main BLOCK ERASE time changed to 0.4s from 0.5s
• MT28F400B3 only available in WG and SG packages
• MT28F004B3 only available in VG package
• Added 80ns access time for commercial and extended temperature ranges
4MbSmart3BootBlockFlashMemory
F45_3.p65 – Rev. 3, Pub. 12/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2001,MicronTechnology,Inc.
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MICRON [ MICRON TECHNOLOGY ]
