4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
Commercial Temperature (0ºC ≤ TA ≤ +70ºC) and Extended Temperature (-40ºC ≤ TA ≤ +85ºC); VCC = +3.3V ±0.3V
AC CHARACTERISTICS
-8/-8 ET
PARAMETER
WRITE cycle time
WE#(CE#)HIGHpulsewidth
WE#(CE#)pulsewidth
SYMBOL
MIN
80
20
50
50
0
50
0
0
MAX
UNITS NOTES
t
WC
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
WPH( CPH)
t
t
WP( CP)
t
Address setup time to WE# (CE#) HIGH
Address hold time from WE# (CE#) HIGH
Data setup time to WE# (CE#) HIGH
Data hold time from WE# (CE#) HIGH
CE# (WE#) setup time to WE# (CE#) LOW
CE# (WE#) hold time from WE# (CE#) HIGH
VPP setup time to WE# (CE#) HIGH
VPP setup time to WE# (CE#) HIGH
RP# HIGH to WE# (CE#) LOW delay
RP# at VHH or WP# HIGH setup time to WE# (CE#) HIGH
WRITEduration(WORDorBYTEWRITE)
BootBLOCKERASEduration
AS
AH
DS
DH
t
t
t
t
t
CS ( WS)
t
t
CH( WH)
0
t
VPS1
VPS2
RS
RHS
WED1
WED2
WED3
WED4
200
100
1,000
100
2
100
100
500
200
0
ns
ns
ns
ns
µs
ms
ms
ms
ns
ns
ns
ns
1
2
t
t
t
3
5
5
5
5
4
5
3
6
t
t
t
ParameterBLOCKERASEduration
MainBLOCKERASEduration
t
t
WE# (CE#) HIGH to busy status (SR7 = 0)
VPP hold time from status data valid
RP# at VHH or WP# HIGH hold time from status data valid
Boot block relock delay time
WB
VPH
RHH
REL
t
t
0
t
100
WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS
3.3V VPP
5V VPP
PARAMETER
TYP MAX TYP MAX UNITS NOTES
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
0.4
2.8
1.5
1.5
7
14
–
0.4
1.5
1
7
14
–
s
s
s
s
7
7
Main BLOCK WRITE time (byte mode)
Main BLOCK WRITE time (word mode)
7, 8, 9
7, 8, 9
–
1
–
NOTE: 1. Measured with VPP = VPPH1 = 3.3V.
2. Measured with VPP = VPPH2 = 5V.
3. RP# should be held at VHH or WP# held HIGH until boot block WRITE or ERASE is complete.
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
t
5. Polling status register before WB is met may falsely indicate WRITE or ERASE completion.
t
6. REL is required to relock boot block after WRITE or ERASE to boot block.
7. Typical values measured at T = +25ºC.
A
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
4MbSmart3BootBlockFlashMemory
F45_3.p65 – Rev. 3, Pub. 12/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2001,MicronTechnology,Inc.
24
MICRON [ MICRON TECHNOLOGY ]
