4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
READ TIMING PARAMETERS
ELECTRICALCHARACTERISTICSANDRECOMMENDEDACOPERATINGCONDITIONS
Commercial Temperature (0ºC £ TA £ +70ºC) and Extended Temperature (-40ºC £ TA £ +85ºC); VCC = +3.3V ±0.3V
1
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
-8/-8 ET
SYMBOL
MIN
MAX
UNITS NOTES
ns
t
RC
ACE
AOE
AA
RWH
OD
80
t
80
40
80
1,000
25
ns
ns
ns
ns
ns
ns
ns
2
2
t
t
t
t
t
OH
t
0
RP
150
NOTE: 1. Measurements tested under AC Test Conditions.
t
t
t
2. OE# may be delayed by ACE minus AOE after CE# falls before ACE is affected.
AC TEST CONDITIONS
Input pulse levels ...................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level ........................................... 1.5V
Output timing reference level ........................................ 1.5V
Output load ................................... 1 TTL gate and CL = 50pF
4MbSmart3BootBlockFlashMemory
F45_3.p65 – Rev. 3, Pub. 12/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2001,MicronTechnology,Inc.
20
MICRON [ MICRON TECHNOLOGY ]
