4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
CAPACITANCE
(TA = 25ºC; f = 1 MHz)
PARAMETER/CONDITION
Input Capacitance
SYMBOL MAX UNITS NOTES
CI
9
pF
pF
Output Capacitance
CO
12
1
READ AND STANDBY CURRENT DRAIN
Commercial Temperature (0ºC £ TA £ +70ºC) and Extended Temperature (-40ºC £ TA £ +85ºC)
PARAMETER/CONDITION
SYMBOL MAX UNITS NOTES
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE# £ 0.2V; OE# VCC - 0.2V; f = 5 MHz;
ICC1
ICC2
ICC3
ICC4
15
15
2
mA
mA
mA
µA
2, 3
2, 3
Other inputs £ 0.2V or VCC - 0.2V; RP# VCC - 0.2V)
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE# £ 0.2V; OE# VCC - 0.2V; f = 5 MHz;
Other inputs £ 0.2V or VCC - 0.2V; RP# = VCC - 0.2V)
STANDBY CURRENT: TTL INPUT LEVELS
VCC power supply standby current
(CE# = RP# = VIH; Other inputs = VIL or VIH)
STANDBY CURRENT: CMOS INPUT LEVELS
VCC power supply standby current
(CE# = RP# = VCC - 0.2V)
100
DEEP POWER-DOWN CURRENT: VCC SUPPLY (RP# = VSS ±0.2V)
STANDBY OR READ CURRENT: VPP SUPPLY (VPP £ 5.5V)
DEEP POWER-DOWN CURRENT: VPP SUPPLY (RP# = VSS ±0.2V)
ICC6
IPP1
IPP2
8
±15
5
µA
µA
µA
NOTE: 1. VCC = MAX during ICC tests.
2. ICC is dependent on cycle rates.
3. ICC is dependent on output loading. Specified values are obtained with the outputs open.
4MbSmart3BootBlockFlashMemory
F45_3.p65 – Rev. 3, Pub. 12/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
©2001,MicronTechnology,Inc.
19
MICRON [ MICRON TECHNOLOGY ]
