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MT250QL01GABA3EW70AITES 参数 Datasheet PDF下载

MT250QL01GABA3EW70AITES图片预览
型号: MT250QL01GABA3EW70AITES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Program/Erase Specifications  
Program/Erase Specifications  
Table 50: Program/Erase Specifications  
Parameter  
Condition  
Typ  
150  
5
Max  
Units Notes  
Erase to suspend  
Program to suspend  
Sector erase or erase resume to erase suspend  
Program resume to program suspend  
µs  
µs  
µs  
1
1
1
Subsector erase to sus-  
pend  
Subsector erase or subsector erase resume to erase sus-  
pend  
50  
Suspend latency  
Suspend latency  
Suspend latency  
Program  
7
25  
30  
30  
µs  
µs  
µs  
2
2
3
Subsector erase  
Erase  
15  
15  
1. Timing is not internally controlled.  
2. Any READ command accepted.  
Notes:  
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;  
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-  
GRAM OTP.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
95  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
 
 
 
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