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MT250QL01GCBA1ESE0SATES 参数 Datasheet PDF下载

MT250QL01GCBA1ESE0SATES图片预览
型号: MT250QL01GCBA1ESE0SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
DC Characteristics and Operating Conditions  
DC Characteristics and Operating Conditions  
Table 46: DC Current Characteristics and Operating Conditions  
Notes 1–5 apply to entire table  
Parameter  
Symbol  
ILI  
Test Conditions  
Typ  
Max  
±2  
Unit  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
mA  
Input leakage current  
Output leakage current  
ILO  
±2  
Standby current (IT range)  
Standby current (AT range)  
Standby current (UT range)  
Deep power-down current (IT range)  
Deep power-down current (AT range)  
Deep power-down current (UT range)  
ICC1  
ICC1  
ICC1  
ICC2  
ICC2  
ICC2  
ICC3  
S# = VCC, VIN = VSS or VCC  
S# = VCC, VIN = VSS or VCC  
S# = VCC, VIN = VSS or VCC  
S# = VCC, VIN = VSS or VCC  
S# = VCC, VIN = VSS or VCC  
S# = VCC, VIN = VSS or VCC  
30  
30  
30  
5
75  
120  
180  
35  
5
80  
5
120  
16  
Operating current  
(fast-read extended I/O)  
C = 0.1VCC/0.9VCC at 133 MHz, DQ1  
= open  
C = 0.1VCC/0.9VCC at 54 MHz, DQ1  
= open  
10  
20  
22  
28  
31  
35  
35  
35  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Operating current (fast-read dual I/O)  
Operating current (fast-read quad I/O)  
C = 0.1VCC/0.9VCC at 133 MHz DQ =  
open  
C = 0.1VCC/0.9VCC at 133 MHz DQ =  
open  
C = 0.1VCC / 0.9VCC at 80 MHz DTR  
DQ = open  
C = 0.1VCC / 0.9VCC at 90 MHz DTR  
DQ = open  
Operating current  
(PROGRAM operations)  
ICC4  
ICC5  
ICC6  
S# = VCC  
S# = VCC  
S# = VCC  
Operating current  
(WRITE operations)  
Operating current (ERASE operations)  
1. All currents are RMS unless noted. Typical values at typical VCC (3.0/1.8V); VIO = 0V/VCC  
;
Notes:  
TC = +25°C.  
2. Standby current is the average current measured over any time interval 5µs after S de-  
assertion (and any internal operations are complete).  
3. Deep power-down current is the average current measured 5ms over any 5ms time in-  
terval, 100µs after the ENTER DEEP POWER-DOWN operation (and any internal opera-  
tions are complete).  
4. All read currents are the average current measured over any 1KB continuous read. No  
load, checker-board pattern.  
5. All program currents are the average current measured over any 256-byte typical data  
program.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
87  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
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