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MT250QL01GCBA1ESE0SATES 参数 Datasheet PDF下载

MT250QL01GCBA1ESE0SATES图片预览
型号: MT250QL01GCBA1ESE0SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
DC Characteristics and Operating Conditions  
Table 47: DC Voltage Characteristics and Operating Conditions  
Notes 1 applies to entire table  
Parameter  
Symbol  
VIL  
Conditions  
Min  
–0.5  
Max  
0.3VCC  
VCC + 0.4  
0.4  
Unit  
V
Input low voltage  
Input high voltage  
Output low voltage  
Output high voltage  
VIH  
0.7VCC  
V
VOL  
IOL = 1.6mA  
V
VOH  
IOH = –100µA  
VCC - 0.2  
V
1. VIL can undershoot to –1.0V for periods <2ns and VIH may overshoot to VCC,max + 1.0V  
for periods less than 2ns.  
Note:  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
88  
© 2014 Micron Technology, Inc. All rights reserved.  
 
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