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MT250QL01GCBA1ESE0SATES 参数 Datasheet PDF下载

MT250QL01GCBA1ESE0SATES图片预览
型号: MT250QL01GCBA1ESE0SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
READ SERIAL FLASH DISCOVERY PARAMETER Operation  
READ SERIAL FLASH DISCOVERY PARAMETER Operation  
READ SERIAL FLASH DISCOVERY PARAMETER Command  
To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven  
LOW. The command code is input on DQ0, followed by three address bytes and eight  
dummy clock cycles (address is always 3 bytes, even if the device is configured to work  
in 4-byte address mode). The device outputs the information starting from the specified  
address. When the 2048-byte boundary is reached, the data output wraps to address 0 of  
the serial Flash discovery parameter table. The operation is terminated by driving S#  
HIGH at any time during data output.  
Note: The operation always executes in continuous mode so the read burst wrap setting  
in the volatile configuration register does not apply.  
Figure 18: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah  
Extended  
0
7
8
Cx  
C
LSB  
A[MIN]  
DQ0  
DQ1  
Command  
MSB  
A[MAX]  
LSB  
DOUT DOUT  
DOUT  
MSB  
DOUT  
DOUT  
DOUT  
DOUT  
DOUT  
DOUT  
High-Z  
Dummy cycles  
Dual  
0
3
4
Cx  
C
LSB  
A[MIN]  
LSB  
DOUT DOUT  
DOUT  
MSB  
DOUT  
DOUT  
DQ[1:0]  
Command  
MSB  
A[MAX]  
Dummy cycles  
Quad  
0
1
2
Cx  
C
LSB  
A[MIN]  
LSB  
DOUT  
DOUT  
MSB  
DOUT  
DQ[3:0]  
Command  
MSB  
A[MAX]  
Don’t Care  
Dummy cycles  
1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;  
For quad protocol, Cx = 1 + (A[MAX] + 1)/4.  
Notes:  
2. S# not shown.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
47  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
 
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