256Mb, 3V Multiple I/O Serial Flash Memory
READ ID Operations
READ ID Operations
READ ID and MULTIPLE I/O READ ID Commands
To initiate these commands, S# is driven LOW and the command code is input on DQn.
When S# is driven HIGH, the device goes to standby. The operation is terminated by
driving S# HIGH at any time during data output.
Table 21: READ ID and MULTIPLE I/O READ ID Operations
Operation Name
Description/Conditions
READ ID (9Eh/9Fh)
Outputs information shown in the Device ID Data tables. If an ERASE or PROGRAM cycle is
in progress when the command is initiated, the command is not decoded and the com-
mand cycle in progress is not affected.
MULTIPLE I/O READ ID (AFh)
Figure 17: READ ID and MULTIPLE I/O READ ID Commands
Extended (READ ID)
0
7
8
15
16
31
32
C
LSB
DQ0
Command
MSB
LSB
DOUT
LSB
DOUT
LSB
DOUT
DOUT
MSB
DOUT
MSB
DOUT
MSB
DQ1
High-Z
Manufacturer
identification
Device
identification
UID
Dual (MULTIPLE I/O READ ID )
0
3
4
7
8
15
C
LSB
LSB
DOUT
LSB
DOUT
DOUT
MSB
DOUT
MSB
DQ[1:0]
Command
MSB
Manufacturer
identification
Device
identification
Quad (MULTIPLE I/O READ ID )
0
1
2
3
4
7
C
LSB
LSB
LSB
DOUT
MSB
DOUT
DOUT
MSB
DOUT
DQ[3:0]
Command
MSB
Manufacturer
identification
Device
identification
Don’t Care
1. S# not shown.
Note:
CCMTD-1725822587-3368
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
46
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