8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
IDD Specifications
Table 12: DDR3 IDD Specifications and Conditions – 8GB (Die Revision E and J)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet.
Parameter
Symbol
1866
720
1600
657
1333
585
1066 Units
1
Operating current 0: One bank ACTIVATE-to-PRECHARGE
IDD0
558
693
mA
mA
1
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
IDD1
792
756
720
2
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
IDD2P0
324
666
324
576
324
504
324
468
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
2
IDD2P1
2
IDD2Q
630
576
504
486
2
IDD2N
630
576
522
504
1
Precharge standby ODT current
Active power-down current
IDD2NT
540
513
477
450
2
IDD3P
738
684
630
576
2
Active standby current
IDD3N
738
684
630
576
1
Burst read operating current
IDD4R
1728
1431
1620
360
1575
1287
1557
360
1422
1152
1494
360
1269
1017
1458
360
1
Burst write operating current
IDD4W
1
Refresh current
IDD5B
2
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
All banks interleaved read current
RESET low current
IDD6
2
IDD6ET
450
450
450
450
1
IDD7
2421
360
2142
360
1872
360
1602
360
2
IDD8
1. One module rank in the active IDD, the other rank in IDD2P0 (slow exit).
2. All ranks in this IDD condition.
Notes:
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. D 12/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
15
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