8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
IDD Specifications
IDD Specifications
Table 11: DDR3 IDD Specifications and Conditions – 8GB (Die Revision D)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet.
Parameter
Symbol
1600
855
1333
765
1066
720
Units
mA
1
Operating current 0: One bank ACTIVATE-to-PRECHARGE
IDD0
1
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
IDD1
963
918
873
mA
2
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
IDD2P0
360
666
360
576
360
540
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
2
IDD2P1
2
IDD2Q
846
756
702
2
IDD2N
900
810
756
1
Precharge standby ODT current
Active power-down current
IDD2NT
630
585
540
2
IDD3P
1134
1116
1863
1665
2160
396
1044
1026
1683
1485
2070
396
954
2
Active standby current
IDD3N
936
1
Burst read operating current
IDD4R
1503
1305
2025
396
1
Burst write operating current
IDD4W
1
Refresh current
IDD5B
2
Self refresh temperature current: MAX TC = 85°C
Self refresh temperature current (SRT-enabled): MAX TC = 95°C
All banks interleaved read current
RESET low current
IDD6
2
IDD6ET
504
504
504
1
IDD7
2790
396
2430
396
2070
396
2
IDD8
1. One module rank in the active IDD, the other rank in IDD2P0 (slow exit).
2. All ranks in this IDD condition.
Notes:
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. D 12/12 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
14
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